CHDTC125TUPT c h e n m k o e n t e r p r i s e c o . , l t d s u r f a c e m o u n t n p n d i g i t a l s i l i c o n t r a n s i s t o r v o l t a g e 5 0 v o l t s c u r r e n t 100 mampere a p p l i c a t i o n f e a t u r e * s m a l l s u r f a c e m o u n t i n g t y p e . ( s c -70/sot-323) * h i g h c u r r e n t g a i n . * s u i t a b l e f o r h i g h p a c k i n g d e n s i t y . construction * one n pn transistors and bias of thin-film resistors in one package. * s w i t c h i n g c i r c u i t , i n v e r t e r , i n t e r f a c e c i r c u i t , d r i v e r c i r c u i t . 2 0 05-06 * l o w c o l l o e c t o r - e m i t t e r s a t u r a t i o n . * h i g h s a t u r a t i o n c u r r e n t c a p a b i l i t y . * i n t e r n a l i s o l a t e d n p n t r a n s i s t o r s i n o n e p a c k a g e . * b u i l t i n s i n g l e r e s i s t o r ( r 1 =200kw, typ. ) c i r c u i t l i m i t i n g v a l u e s i n a c c o r d a n c e w i t h t h e a b s o l u t e m a x i m u m r a t i n g s y s t e m ( i e c 6 0 1 3 4 ) . n o t e 1 . t r a n s i s t o r m o u n t e d o n a n f r 4 p r i n t e d - c i r c u i t b o a r d . 2 1 3 emitter base collector t r r 1 symbol parameter conditions value unit v cbo coll ector -base voltage 50 v 50 v junction - soldering point 5 i c(max.) coll ector current 100 ma p d p o w er d i ss i p a t i o n t a m b 25 o c, n ot e 1 200 mw t stg storage temperature -55 ~ + 150 o c t j r q j-s thermal resistance junction temperature o c 140 o c/w v ceo collector-emitter voltage v ebo emitter-base voltage -55 ~ + 150 v , n ot e 1 sc-70/sot-323 m a r k i n g tuf d i m e n s i o n s i n m i l l i m e t e r s s c - 7 0 / s o t - 3 2 3 (1) (2) ( 3 ) 0 . 6 5 0 . 6 5 1 . 3 0 . 1 2 . 0 0 . 2 0 . 8~1.1 0 . 3 0 . 1 0 . 05~0.2 0 ~ 0 . 1 1 . 2 5 0 . 1 2 . 0~2.45 0 . 1 m i n .
c h a r a c t e r i s t i c s t a m b = 2 5 c u n l e s s o t h e r w i s e s p e c i t e d . n o t e 1 . p u l s e t e s t : t p 3 0 0 u s ; d 0 . 0 2 . s y m b o l p a r a m e t e r c o n d i t i o n s m i n . t y p . m a x . u n i t b v c b o c o l l e c t o r - b a s e b r e a k d o w n v o l t a g e i c = 5 0ua 50 - v b v c e o c o l l e c t o r - e m i t t e r b r e a k d o w n v o l t a g e i c = 1 . 0 m a 5 0 - - - v v b v e b o e m i t t e r - b a s e b r e a k d o w n v o l t a g e i e =50ua 5.0 - - i c b o c o l l e c t o r c u t o f f c u r r e n t v c b = 5 0 v - - 0 . 5 ua i e b o e m i t t e r c u t o f f c u r r e n t h f e d c c u r r e n t g a i n v e b = 4 v v c e ( s a t ) c o l l e c t o r - e m i t t e r s a t u r a t i o n v o l t a g e i c / i b =0.5ma/0.05ma - 0 . 5 - 0 . 3 6 0 0 1 0 0 r 1 i n p u t r e s i s t o r 140 260 - - 250 200 kw u a f t t r a n s i t i o n f r e q u e n c y i c = 5 m a , v c e = 1 0 . 0 v f = 1 0 0 m h z - - 2 5 0 m h z r a t i n g c h a r a c t e r i s t i c ( c h d t c 125tupt ) i c = 1 m a ; v c e = 5 . 0 v v
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